US 2020/0006374 A1 · THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALUMINUM-SILICON WORD LINES AND METHODS OF MANUFACTURING THE SAME

Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The electrically conductive layers include aluminum and silicon and provide low resistance electrically conductive paths as word lines of the three-dimensional memory device. The aluminum-based electrically conductive layers can provide low resistivity, low mechanical stress, and thermal stability for use as high performance word lines.

Claims20

Dependent claims

A three-dimensional memory device comprising:

an alternating stack of insulating layers and electrically conductive layers located over a substrate;
and
memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film, and extends through each of the electrically conductive layers and is laterally surrounded by each of the electrically conductive layers,
wherein each of the electrically conductive layers includes a respective metallic alloy material portion including aluminum and silicon, wherein at least 40% of all atoms within the metallic alloy material portion are aluminum atoms and at least 1% of all atoms within the metallic alloy material portions are silicon atoms.

1 more element

A method of forming a three-dimensional memory device, comprising:

forming an alternating stack of insulating layers and sacrificial material layers over a substrate;
forming memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film;
and
replacing the sacrificial material layers with material portions including electrically conductive layers, wherein the electrically conductive layers are formed at each level of the sacrificial material layers, and each of the electrically conductive layers includes a respective metallic alloy material portion including aluminum and silicon in which at least 40% of all atoms within the metallic alloy material portion are aluminum atoms and at least 1% of all atoms within the metallic alloy material portions are silicon atoms.

1 more element

Dependencies are inferred from the claim text.

Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same

Life of this patent

Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same

Life of this patent

Abstract

Claims20