Partially disposed gate layer into the trenches
AssigneeTexas Instruments Incorporated
InventorsXiang-Zheng BO, John H. MACPEAK, Douglas T. GRIDER
Life of this patent
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Abstract
In accordance with some examples, a system comprises a substrate layer having an outer surface. The system also comprises a plurality of trenches extending from the outer surface into the substrate layer. The system then comprises a plurality of active regions with each active region positioned between a different pair of consecutive trenches of the plurality of trenches. The system also comprises a dielectric layer disposed in each of the plurality of trenches and on each of the plurality of active regions. The system then comprises a floating gate layer disposed on the dielectric layer and extending at least partially into each of the plurality of trenches.
Claims18
A system, comprising:
- a substrate layer having an outer surface;
- a plurality of trenches extending from the outer surface into the substrate layer;
- a plurality of active regions, each active region positioned between a different pair of consecutive trenches of the plurality of trenches;
- a dielectric layer disposed in each of the plurality of trenches and on each of the plurality of active regions;
- and
- a floating gate layer disposed on the dielectric layer and extending at least partially into each of the plurality of trenches.
A device, comprising:
- a substrate layer;
- first and second trenches extending into the substrate layer;
- an active region in the substrate, the active region positioned between the first and second trenches;
- a dielectric layer disposed in each of the first and second trenches and the active region;
- and
- a floating gate layer disposed on the dielectric layer and extending at least partially into each of the first and second trenches.
A semiconductor die having a bitcell memory array, each bitcell of the bitcell memory array comprising:
- a first trench and a second trench extending into a substrate layer;
- an active region in the substrate layer, the active region positioned between the first and second trenches;
- a dielectric layer disposed in each of the first and second trenches and the active region;
- and
- a floating gate layer disposed on the dielectric layer and extending at least partially into each of the first and second trenches.
Dependencies are inferred from the claim text.