Multi-component conductive structures for semiconductor devices
AssigneeMicron Technology, Inc.
InventorsFatma Arzum Simsek-Ege, Eric Blomiley
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Abstract
Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.
Claims22
A method of forming a semiconductor device, comprising:
- forming conductive materials within a recess within a substrate structure, comprising,
- forming a first conductive material within the recess of the substrate structure by a cyclic deposition process, the deposited first conductive material comprising at least 60% ruthenium, the first filling the majority of the recess;
- and
- forming a second conductive material on the first conductive material through a different deposition process than the cyclic deposition process, the deposited second conductive material comprising 40% or less of ruthenium.
A method of forming a memory structure, comprising:
- forming multiple pillars of semiconductor material extending above a substrate, the pillars defined at least in part by recesses in the semiconductor material;
- depositing conductive material within a first recess between two pillars to form a word line of the memory structure, comprising,
- depositing a first conductive material within a first recess between two pillars, the deposited first conductive material comprising at least 60% ruthenium, and deposited by a cyclic deposition process, the first conductive material forming the majority of the word line;
- depositing a second conductive material within the first recess and in contact with the first conductive material, the second conductive material comprising 40% or less of ruthenium.
Dependencies are inferred from the claim text.