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US 2020/0006347 A1Published application
Dynamic random access memory structure
AssigneeWinbond Electronics Corp.
InventorChih-Hao Lin
Life of this patent
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Abstract
A dynamic random access memory (DRAM) structure is provided, and the DRAM structure includes a substrate, a DRAM, and a guard ring structure. The substrate includes a memory cell region. The DRAM is disposed in the memory cell region. The DRAM includes a capacitor contact coupled to a capacitor structure. The guard ring structure surrounds a border of the memory cell region. The capacitor contact and the guard ring structure originate from the same conductive layer.
Claims9
A dynamic random access memory (DRAM) structure, comprising:
- a substrate, comprising a memory cell region;
- a DRAM, disposed in the memory cell region, wherein the DRAM comprises a capacitor contact coupled to a capacitor structure;
- and
- a guard ring structure, surrounding a border of the memory cell region, wherein the capacitor contact and the guard ring structure originate from the same conductive layer.
1 more element
Dependencies are inferred from the claim text.