Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsSe Ki HONG, Ju Youn KIM, Jin Wook KIM
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Abstract
A semiconductor device includes a substrate having first and second regions, a first gate electrode layer on the first region, and including a first conductive layer, and a second gate electrode layer on the second region, and including the first conductive layer, a second conductive layer on the first conductive layer, and a barrier metal layer on the second conductive layer, wherein an upper surface of the first gate electrode layer is at a lower level than an upper surface of the second gate electrode layer.
Claims23
A semiconductor device, comprising:
- a substrate having first and second regions;
- a first gate electrode layer on the first region, and including a first conductive layer;
- and
- a second gate electrode layer on the second region, and including the first conductive layer, a second conductive layer on the first conductive layer, and a barrier metal layer on the second conductive layer,
- wherein an upper surface of the first gate electrode layer is at a lower level than an upper surface of the second gate electrode layer.
(canceled)
-10. (canceled)
A semiconductor device, comprising:
- a substrate having first and second regions;
- a first gate electrode layer on the first region, and including a first conductive layer;
- and
- a second gate electrode layer on the second region, and including the first conductive layer and a second conductive layer on the first conductive layer and having a work function lower than a work function of the first conductive layer,
- wherein the first conductive layer in the first gate electrode layer has a substantially constant width, and the second conductive layer in the second gate electrode layer has a shape in which a width of an upper portion is wider than a width of a lower portion.
(canceled)
A semiconductor device, comprising:
- a semiconductor substrate including first and second regions having impurities of a same conductivity type;
- a first gate electrode layer on the first region, and including a first conductive layer;
- and
- a second gate electrode layer on the second region, and including the first conductive layer and a second conductive layer on the first conductive layer,
- wherein the second gate electrode layer has a greater thickness than the first gate electrode layer, and a first transistor including the first gate electrode layer has an operating voltage different from an operating voltage of a second transistor including the second gate electrode layer.
Dependencies are inferred from the claim text.