Odd-fin height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same

A semiconductor device comprising:

• cell regions, each of the cell regions including:
• fins extending substantially parallel to a first direction;
• at least one of the fins being a dummy fin;
• and
• at least one of the fins being an active fin;
• and
• gate structures formed over corresponding ones of the fins and extending substantially parallel to a second direction, the second direction being substantially perpendicular to the first direction;
• and
• wherein:
• relative to stacking in the second direction, at least a first one of the cell regions has a hetero-stackable configuration.

A method of generating a layout diagram, the layout diagram being stored on a non-transitory computer-readable medium, the method comprising:

• generating fin patterns ;
• arranging the fin patterns substantially parallel to a first direction;
• designating as a dummy fin pattern at least one of the fins patterns;
• designating as an active fin pattern at least one of the fin patterns;
• generating at least one gate pattern;
• arranging the at least one gate pattern to be substantially parallel to a second direction, the second direction being substantially perpendicular to the first direction;
• locating the at least one gate pattern over corresponding ones of the fin patterns;
• and
• defining a cell as including an odd number of fin patterns;
• and
• wherein at least one aspect of the method is executed by a processor of a computer.