Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorYasuaki SAKAI
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device including a first MOSFET; a second MOSFET; a first resistor provided between a gate terminal of the first MOSFET and a source terminal of the second MOSFET; a second resistor provided between a source terminal of the first MOSFET and a gate terminal of the second MOSFET; a first diode provided in series with the first resistor between the gate terminal of the first MOSFET and the source terminal of the second MOSFET; and a second diode provided in series with the second resistor between the source terminal of the first MOSFET and the gate terminal of the second MOSFET.
Claims5
A semiconductor device comprising:
- a first MOSFET;
- a second MOSFET;
- a first resistor provided between a gate terminal of the first MOSFET and a source terminal of the second MOSFET;
- a second resistor provided between a source terminal of the first MOSFET and a gate terminal of the second MOSFET;
- a first diode provided in series with the first resistor between the gate terminal of the first MOSFET and the source terminal of the second MOSFET;
- and
- a second diode provided in series with the second resistor between the source terminal of the first MOSFET and the gate terminal of the second MOSFET.
Dependencies are inferred from the claim text.