Schottky diode structures and integration with iii-v transistors

A method for forming a semiconductor device, the method comprising:

• forming a channel base including a layer of III-V material above a substrate;
• forming a channel stack above the channel base, wherein the channel stack includes a layer of III-V material in the channel stack, and a polarization layer above the layer of III-V material in the channel stack, the channel stack includes a first portion as a channel of an III-V transistor, and a second portion separated from the first portion by an isolation area;
• forming a Schottky stack including a first layer above the second portion of the channel stack, and a second layer above the first layer, wherein the first layer includes an III-V material, and the second layer is a polarization layer;
• forming a Schottky anode in contact with the second layer to form a Schottky barrier at an interface between the Schottky anode and the second layer of the Schottky stack;
• and
• forming a cathode through the second layer of the Schottky stack and in contact with the first layer of the Schottky stack, wherein a current is to flow from the Schottky anode through the Schottky barrier in a vertical direction orthogonal to a surface of the substrate, and vertically through the second layer to the first layer of the Schottky stack, following the first layer of the Schottky stack in a horizontal direction to the cathode.

A computing device, comprising:

• a processor;
• and
• a memory device coupled to the processor, wherein the memory device or the processor includes a Schottky diode comprising:
• a Schottky stack including a first layer above a substrate, and a second layer above the first layer, wherein the first layer includes an III-V material, and the second layer is a polarization layer;
• a Schottky anode in contact with the second layer to form a Schottky barrier at an interface between the Schottky anode and the second layer of the Schottky stack;
• and
• a cathode through the second layer of the Schottky stack and in contact with the first layer of the Schottky stack, wherein a current is to flow from the Schottky anode through the Schottky barrier in a vertical direction orthogonal to a surface of the substrate, and vertically through the second layer to the first layer of the Schottky stack, following the first layer of the Schottky stack in a horizontal direction to the cathode.