Forming Metal Bonds with Recesses
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Hsien-Wei Chen, Sung-Feng Yeh, Wen-Chih Chiou
Life of this patent
Estimating the term…
Abstract
A method includes forming a first device die, which includes depositing a first dielectric layer, and forming a first metal pad in the first dielectric layer. The first metal pad includes a recess. The method further includes forming a second device die including a second dielectric layer and a second metal pad in the second dielectric layer. The first device die is bonded to the second device die, with the first dielectric layer being bonded to the second dielectric layer, and the first metal pad being bonded to the second metal pad.
Claims20
A device comprising:
- a first device die comprising:
- a first dielectric layer;
- and
- a first metal pad comprising:
- a diffusion barrier contacting the first dielectric layer;
- and
- a metallic material between opposite portions of the diffusion barrier, wherein in a cross-sectional view of the first metal pad, an edge portion of the metallic material is recessed from a top edge of a nearest portion of the diffusion barrier to form an air gap;
- and
- a second device die comprising:
- a second dielectric layer bonded to the first dielectric layer;
- and
- a second metal pad bonded to the first metal pad through metal-to-metal direct bonding.
A device comprising:
- a first die comprising:
- a semiconductor substrate;
- a first dielectric layer over and contacting the semiconductor substrate;
- a through-via penetrating through the semiconductor substrate;
- and
- a first metal pad in the first dielectric layer;
- a second die over the first die, the second die comprising:
- a second dielectric layer;
- and
- a second metal pad in the second dielectric layer and bonded to the first metal pad, wherein an air gap is formed at a joining point of the first metal pad and the second metal pad, with at least one of the first metal pad and the second metal pad exposing to the air gap;
- and
- a gap filling dielectric material encapsulating the second die therein.
A device comprising:
- a first package component comprising:
- a first dielectric layer;
- and
- a first metal feature extending into the first dielectric layer, the first metal feature comprising:
- a first diffusion barrier;
- and
- a first metallic material between opposite portions of the first diffusion barrier;
- and
- a second package component comprising:
- a second dielectric layer bonded to the first dielectric layer through fusion bonding;
- and
- a second metal feature bonded to the first metal feature through metal-to-metal direct bonding, wherein the second metal feature comprises:
- a second diffusion barrier;
- and
- a second metallic material between opposite portions of the second diffusion barrier;
- and
- an air gap, with the first diffusion barrier, the second diffusion barrier, and the first metallic material being exposed to the air gap.
Dependencies are inferred from the claim text.