Semiconductor structure and method of forming the same

A method of forming a semiconductor structure, comprising:

• providing a first substrate;
• forming a first bonding layer on a surface of the first substrate, wherein a material of the first bonding layer is a dielectric material containing element carbon (C) and a CH3 bond;
• providing a second substrate;
• forming a second bonding layer on a surface of the second substrate, wherein a material of the second bonding layer is a dielectric material containing element C and a CH3 bond;
• oxidizing a surface layer of the first bonding layer and a surface layer of the second bonding layer, wherein the CH3 bonds are oxidized to be OH bonds;
• and
• bonding the first bonding layer and the second bonding layer to each other correspondingly.