Through-silicon via pillars for connecting dice and methods of assembling same
OwnerAndreas Augustin, Georg Seidemann +2inventors
InventorsAndreas Augustin, Georg Seidemann, Thomas Wagner, Bernd Waidhas
Life of this patent
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Abstract
Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.
Claims23
A semiconductive die, comprising:
- a semiconductive device substrate including an active surface and a backside surface;
- a through-silicon via (TSV) pillar that communicates from the active surface to the backside surface;
- and
- a recess in the semiconductive device substrate at the backside surface, wherein the TSV pillar emerges within the recess.
A process of forming a semiconductor apparatus, comprising:
- thinning a semiconductive device substrate at a backside surface to expose a through-silicon via (TSV) post;
- and
- removing semiconductive material at the backside surface adjacent the post to form a recess and to further expose the TSV post.
A computing system, comprising:
- a semiconductive device substrate including an active surface and a backside surface;
- a through-silicon via (TSV) pillar that communicates from the active surface to the backside surface;
- a recess in the semiconductive device substrate at the backside surface, wherein the TSV pillar emerges within the recess;
- an electrical bump seated in the recess and in contact with the TSV pillar;
- wherein the electrical bump contacts one selected from the group consisting of a semiconductor package substrate and a subsequent semiconductive device;
- and
- wherein the semiconductive device substrate is part of a chipset.
Dependencies are inferred from the claim text.