Semiconductor Interconnect Structure and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJie Chen, Hsien-Wei Chen
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Abstract
A semiconductor device includes a first interconnect structure over first substrate, a first bonding layer over the first interconnect structure, multiple first bonding pads disposed in a first region of the first bonding layer, the first bonding pads having a first pitch, and multiple second bonding pads disposed in a second region of the first bonding layer, the second region extending between a first edge of the first bonding layer and the first region, the second bonding pads having the first pitch, the multiple second bonding pads including multiple pairs of adjacent second bonding pads, wherein the second bonding pads of each respective pair are connected by a first metal line.
Claims20
A semiconductor device comprising:
- a first interconnect structure over first substrate;
- a first bonding layer over the first interconnect structure;
- a plurality of first bonding pads disposed in a first region of the first bonding layer, the first bonding pads having a first pitch;
- and
- a plurality of second bonding pads disposed in a second region of the first bonding layer, the second region extending between a first edge of the first bonding layer and the first region, the second bonding pads having the first pitch, the plurality of second bonding pads comprising a plurality of pairs of adjacent second bonding pads, wherein the second bonding pads of each respective pair are connected by a first metal line.
A method comprising:
- depositing a dielectric layer over a semiconductor substrate;
- etching first bond pad openings and second bond pad openings in the dielectric layer, wherein the first bond pad openings are adjacent one or more sidewalls of the semiconductor substrate, wherein each second bond pad opening is adjacent at least one first bond pad opening;
- etching trenches in the dielectric layer, each trench extending between at least one first bond pad opening and at least one second bond pad opening;
- depositing conductive material within the first bond pad openings to form first bond pads, within the second bond pad openings to form second bond pads, and within the trenches to form electrical connections between first bond pads and second bond pads;
- and
- removing excess conductive material using a planarization process.
A method comprising:
- forming a first semiconductor device comprising:
- forming an interconnect structure on a first substrate;
- forming a first bonding layer on the interconnect structure;
- and
- forming first bonding pads in the first bonding layer, wherein a first plurality of the first bonding pads comprise sets of adjacent first bonding pads connected in parallel by a plurality of first conductive lines;
- forming a second semiconductor device comprising:
- forming a second bonding layer on a second substrate;
- and
- forming second bonding pads in the second bonding layer, wherein a first plurality of the second bonding pads comprise sets of adjacent second bonding pads connected in parallel by a plurality of second conductive lines;
- and
- bonding the first bonding layer to the second bonding layer, comprising bonding the first plurality of first bonding pads to the first plurality of second bonding pads.
Dependencies are inferred from the claim text.