Substrate integrated thin film capacitors using amorphous high-k dielectrics
AssigneeIntel Corporation
InventorsAleksandar ALEKSOV, Thomas SOUNART, Kristof DARMAWIKARTA, Henning BRAUNISCH, Prithwish CHATTERJEE, Andrew J. BROWN
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Abstract
Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.
Claims25
An electronic package, comprising:
- a dielectric layer;
- and
- a capacitor on the dielectric layer, wherein the capacitor comprises:
- a first electrode disposed over the dielectric layer;
- a capacitor dielectric layer over the first electrode, wherein the capacitor dielectric layer is an amorphous dielectric layer;
- and
- a second electrode over the capacitor dielectric layer.
An electronics system comprising:
- a package substrate;
- a die electrically and mechanically coupled to the package substrate;
- and
- a plurality of capacitors in the package substrate, wherein each of the plurality of capacitors comprises an amorphous dielectric layer.
A method of forming a capacitor in a build-up layer, comprising:
- disposing a first electrode on a first dielectric layer;
- disposing an amorphous dielectric layer over the first electrode, wherein the amorphous dielectric layer has a thickness that is less than 50 nm and a k-value that is 10 or greater;
- disposing a second electrode over the amorphous dielectric layer;
- and
- disposing a second dielectric layer over the first dielectric layer.
Dependencies are inferred from the claim text.