Semiconductor device and method of manufacturing same
AssigneeMitsubishi Electric Corporation
InventorTsuyoshi TANIGAKI
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Abstract
Provided is a semiconductor device including electronic components electrically joined to each other via a metal nanoparticle sintered layer, wherein the metal nanoparticle sintered layer has formed therein a metal diffusion region in which a metal constituting a metallization layer formed on a surface of one of the electronic components is diffused, and in which the metal is present in an amount of 10 mass % or more and less than 100 mass % according to TEM-EDS analysis, and wherein the metal diffusion region has a thickness smaller than a thickness of the metallization layer.
Claims8
A semiconductor device, comprising electronic components electrically joined to each other via a metal nanoparticle sintered layer,
- wherein the metal nanoparticle sintered layer has formed therein a metal diffusion region in which a metal constituting a metallization layer formed on a surface of one of the electronic components is diffused, and in which the metal is present in an amount of 10 mass % or more and less than 100 mass % according to TEM-EDS analysis, and
- wherein the metal diffusion region has a thickness smaller than a thickness of the metallization layer.
A method of manufacturing a semiconductor device including electrically joining electronic components to each other via a metal nanoparticle sintered layer,
- the method comprising a step of subjecting a metallization layer formed on a surface of one of the electronic components to oxygen plasma treatment or nitrogen plasma treatment and then performing the joining by heating and pressurizing to diffuse a metal constituting the metallization layer into the metal nanoparticle sintered layer, to thereby form a metal diffusion region having a thickness smaller than a thickness of the metallization layer.
A method of manufacturing a semiconductor device including electrically joining electronic components to each other via a metal nanoparticle sintered layer,
- the method comprising a step of applying a hydrocarbon-based solvent or an alcohol-based solvent having a boiling point of 80° C. or more and 350° C. or less to a metal nanoparticle layer before being sintered and then performing the joining by heating and pressurizing to diffuse a metal constituting a metallization layer formed on a surface of one of the electronic components into the metal nanoparticle sintered layer, to thereby form a metal diffusion region having a thickness smaller than a thickness of the metallization layer.
Dependencies are inferred from the claim text.