US 2020/0006231 A1Published application

Semiconductor memory device

AssigneeSamsung Electronics Co., Ltd.

InventorsJUNGWOO SONG, Ye-Ro LEE, Kwangtae HWANG, Kwangmin KIM, YONG KWAN KIM, JIYOUNG KIM

Life of this patent

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Abstract

A semiconductor device including a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. The capping pattern defines a top surface of the air spacer and comprises a metallic material.

Claims20

Dependent claims

A semiconductor memory device comprising:

a substrate;
a device isolation layer disposed in the substrate defining an active region extending in a first direction;
first conductive lines disposed in the active region and extending in a second direction crossing the first direction;
a second conductive line disposed on the active region between the first conductive lines and extending in a third direction crossing the first direction and the second direction;
a bit line node contact disposed between the active region and the second conductive line;
a landing pad disposed on an edge portion of the active region;
a storage node contact between the landing pad and the edge portion of the active region;
a buried pattern disposed between the bit line node contact and the storage node contact;
a first spacer disposed between a sidewall of the second conductive line and the landing pad;
an air spacer disposed between the first spacer and the landing pad;
and
a capping pattern protruding from a sidewall of the landing and disposed on the air spacer,
wherein the capping pattern is spaced apart from the first spacer.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/561,008Filed 4 Sep 2019
Priority: KR 10-2016-017382719 Dec 2016
Published: 2 Jan 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10W 20/48
Characterised by their insulating parts: insulating materials thereof
H10B 12/033
Making the capacitor or connections thereto: the capacitor extending over the transistor
H10B 12/053
Making the transistor: the transistor being at least partially in a trench in the substrate
H10B 12/315
Having a storage electrode stacked over the transistor: with the capacitor higher than a bit line

Family

Application15/706,655Continuation · filed 15 Sep 2017
Application16/561,008Continuation
US 10,453,796 B2Related patent
US 2018/0174971 A1Published application
US 2020/0006231 A1This patent

From the US filing history. Foreign family members aren’t listed.