Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung Lin, Chun-Hsien Huang, I-Tseng Chen
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Abstract
A semiconductor structure includes a conductive structure, a dielectric layer, and a plurality of conductive features. The dielectric layer is present on the conductive structure. The dielectric layer has a plurality of through holes therein, and at least one of the through holes exposes the conductive structure. The conductive features are respectively present in the through holes. At least one of the conductive features has a bottom surface and at least one sidewall. The bottom surface and the sidewall of the conductive feature intersect to form an interior angle. The interior angles of adjacent two of the conductive features have a difference less than or substantially equal to about 3 degrees.
Claims21
A semiconductor structure, comprising:
- a first dielectric layer over a first source/drain feature and a second source/drain feature;
- a gate structure disposed between the first source/drain feature and the-a second source/drain feature, wherein a top of the first dielectric layer is at or above a top surface of the gate structure;
- a second dielectric layer over the first dielectric layer and over the top surface of the gate structure;
- a first conductive feature extending through the first dielectric layer and the second dielectric layer;
- and
- a second conductive feature extending through the second dielectric layer.
(canceled)
A method for manufacturing a semiconductor structure, comprising:
- forming a conductive structure comprising a first portion and a second portion;
- forming a dielectric layer over the conductive structure, wherein the first portion of the conductive structure is separated from the second portion of the conductive structure by the dielectric layer;
- forming a metal hard mask over the dielectric layer;
- etching the metal hard mask to form a patterned metal hard mask;
- and
- patterning the dielectric layer with the patterned metal hard mask to form a first through hole exposing the first portion of the conductive structure and a second through hole exposing the second portion of the conductive structure.
A semiconductor structure, comprising:
- an electric element;
- a layer over the electric element, wherein the layer is in contact with a sidewall of the electric element and a top surface of the electric element;
- a first conductive portion over the layer;
- a second conductive portion over the layer;
- a dielectric layer over the first conductive portion and the second conductive portion, wherein:
- the dielectric layer is between the first conductive portion and the second conductive portion, and
- the dielectric layer is in contact with the layer;
- a first conductive feature extending through the dielectric layer and contacting the first conductive portion;
- and
- a second conductive feature extending through the dielectric layer and contacting the second conductive portion.
Dependencies are inferred from the claim text.