US 2020/0006222 A1Published application

Semiconductor device

AssigneeRenesas Electronics Corporation

InventorsYoshikazu NAGAMURA, Takashi IPPOSHI, Katsumi EIKYU

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Abstract

The semiconductor device has a wiring M 2, an interlayer insulating film IL3 formed on the wiring M 2, and two wirings M 3 formed on the interlayer insulating film IL3, and the wiring M 3 is connected to the wiring M 2 by a conductor layer PG2 formed in the interlayer insulating film IL3. A recess CC3 is formed on the upper surface IL3a of the interlayer insulating film IL3, and the recess CC3 is defined by a side surface S 31 connected to the upper surface IL3a and a side surface S 32 connected to the side surface S 31, and the side surface S 32 is inclined so that the width WC3 of the recess CC3 decreases in the direction from the upper surface IL3a of the interlayer insulating film IL3 toward the upper surface IL2a of the interlayer insulating film IL2.

Claims13

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate including a main surface;
a first interlayer insulating formed on the main surface of the semiconductor substrate and including a first upper surface;
a first wiring formed on the first upper surface of the first interlayer insulating;
a second interlayer insulating film formed on the first upper surface of the first interlayer insulating and including a second upper surface so that the second interlayer insulating film covers the first wiring;
and
a second wiring formed on the second upper surface of the second interlayer insulating film,
wherein the first wiring has a first film thickness,
wherein the second wiring has a second film thickness greater than the first film thickness,
wherein the second interlayer insulating film has a first recess extending from the second upper surface toward the first upper surface in a region in contact with the second wiring,
wherein the first recess is defined by a first side surface connected to the second upper surface and a second side surface connected to the first side surface in cross-sectional view,
wherein the second side surface is inclined so that a width of the first recess decreases in a direction from the second upper surface toward the first upper surface.

8 more elements

A semiconductor device comprising:

a semiconductor substrate including a main surface;
a first interlayer insulating film formed on the main surface of the semiconductor substrate and including a first upper surface;
a first wiring formed on the first upper surface of the first interlayer insulating film;
a second interlayer insulating film formed on the first upper surface of the first interlayer insulating film and including a second upper surface so that the second interlayer insulating film covers the first wiring;
and
a second wiring formed on the second upper surface of the second interlayer insulating film,
wherein the first wiring has a first film thickness,
wherein the second wiring has a second film thickness greater than the first film thickness,
wherein the first interlayer insulating film has a first recess that is extended from the first upper surface toward the main surface in a region in contact with the first wiring,
wherein the second interlayer insulating film has a second recess that is extended from the second upper surface toward the first upper surface in a region in contact with the second wiring,
wherein the first recess is defined by a first straight side surface in cross-sectional view,
wherein the second recess is defined by a second straight side surface in cross-sectional view,
wherein the second side surface is inclined so that the width of the second recess decreases in a direction from the second upper surface toward the first upper surface, and
wherein a first angle that is formed by the first side surface with respect to the first upper surface is larger than a second angle that is formed by the second side surface with respect to the second upper surface.

11 more elements

A semiconductor device, comprising:

a semiconductor substrate including a main surface;
a first interlayer insulating film formed on the main surface of the semiconductor substrate and including a first upper surface;
a first wiring formed on the first upper surface of the first interlayer insulating film;
a second interlayer insulating film formed on the first upper surface and including a second upper surface so that the second interlayer insulating film covers the first wiring;
and
a second wiring formed on the second upper surface of the second interlayer insulating film,
wherein the first wiring has a first film thickness, the second wiring has a second film thickness greater than the first film thickness, and
the first interlayer insulating film has a first recess extending from the first upper surface toward the main surface in a region in contact with the first wiring, the second interlayer insulating film has a second recess extending from the second upper surface toward the first upper surface in a region in contact with the second wiring;
and
the second interlayer insulating film has a second recess extending from the second upper surface toward the first upper surface in a region in contact with the second wiring, and
the second recess extends to a lower portion of the second wiring in cross-sectional view.

8 more elements

Dependencies are inferred from the claim text.