Planarizing RDLS in RDL-First Processes Through CMP Process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo, Chen-Hua Yu
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Abstract
A method includes forming a buffer dielectric layer over a carrier, and forming a first dielectric layer and a first redistribution line over the buffer dielectric layer. The first redistribution line is in the first dielectric layer. The method further includes performing a planarization on the first dielectric layer to level a top surface of the first dielectric layer, forming a metal post over and electrically coupling to the first redistribution line, and encapsulating the metal post in an encapsulating material. The encapsulating material contacts a top surface of the planarized top surface of the first dielectric layer.
Claims20
A device comprising:
- a first dielectric layer;
- a first redistribution line and a second redistribution line in the first dielectric layer;
- an adhesive film over and contacting both a first top surface of the first dielectric layer and a second top surface of the first redistribution line;
- a device die over and adhered to the adhesive film;
- and
- an encapsulating material encapsulating the device die therein, wherein the encapsulating material contacts the first top surface of the first dielectric layer.
A device comprising:
- a first dielectric layer comprising a first top surface;
- a first redistribution line and a second redistribution line in the first dielectric layer;
- a die-attach film overlapping the first dielectric layer and the first redistribution line;
- a device die over and adhered to the die-attach film;
- a through-via over and contacting a second top surface of the second redistribution line, wherein the first dielectric layer comprises a continuous top surface continuously extending directly underlying the die-attach film, and extending to opposite sides of the second redistribution line, and the continuous top surface is planar;
- and
- an encapsulant encapsulating the device die and the through-via therein.
A device comprising:
- a dielectric layer;
- and
- a first redistribution line comprising:
- a first conductive material;
- a first diffusion barrier comprising a first bottom portion overlapped by the first conductive material, and first sidewall portions on sidewalls of the first conductive material, wherein first top edges of the first sidewall portions are recessed lower than a first top surface of the first conductive material and a second top surface of the dielectric layer;
- and
- a film over and contacting both of the first top surface and the second top surface, wherein the film is vertically spaced apart from the first top edges.
Dependencies are inferred from the claim text.