Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via and Method of Forming the Same

A method of forming a semiconductor device, the method comprising:

• forming on a frontside of a semiconductor substrate a transistor;
• forming a conductor extending from the frontside of the substrate into the substrate;
• recessing a backside of the substrate to expose an end of the conductor;
• conformally depositing a dielectric film over sidewalls and a top surface of the end of the conductor;
• removing the dielectric film from the top surface of the end of the conductor, while the dielectric film remains covering the sidewalls of the end of the conductor;
• depositing a conductive layer over the dielectric film and electrically contacting the top surface of the end of the conductor;
• and
• patterning the conductive layer.

A method of forming a semiconductor device, the method comprising:

• forming a continuous homogenous conductor extending into a semiconductor substrate;
• recessing a surface of the semiconductor substrate to expose an end of the conductor;
• covering sidewalls of the end of the conductor with an isolation film while leaving a top surface of the end of the conductor uncovered;
• covering with a conductive layer the isolation film and the top surface of the end of the conductor;
• patterning the conductive layer;
• and
• forming a patterned passivation layer over the patterned conductive layer, the patterned passivation layer covering sidewalls of the patterned conductive layer and leaving uncovered a central portion of the patterned conductive layer.