Back to results
US 2020/0006200 A1Published application
Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
AssigneeAdvanced Interconnect Systems Limited
InventorsHaruki Ito, Nobuaki Hashimoto
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.
Claims30
A device comprising:
- a semiconductor substrate including a first face and a second face on a side opposite to the first face;
- a foundation layer formed on the first face of the semiconductor substrate;
- a first electrode formed on the foundation layer;
- a second electrode formed on the foundation layer;
- an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face of the semiconductor substrate, and the integrated circuit being electrically connected to the first electrode and the second electrode;
- a groove portion formed through the semiconductor substrate;
- an insulating film formed on a side wall of the groove portion;
- a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;
- a first insulation layer formed on the foundation layer;
- a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;
- a second insulation layer formed on the first interconnection and the first insulation layer;
- a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection;
- and
- a third insulation layer formed on the second interconnection and the second insulation layer;
- wherein the semiconductor substrate is silicon;
- wherein the integrated circuit is configured to apply a voltage to the second electrode;
- and
- wherein the second interconnection, the first interconnection, the first electrode, the integrated circuit, the second electrode and the conductive portion are electrically connected in that order.
15 more elements
A device comprising:
- a semiconductor substrate including a first face and a second face on a side opposite to the first face;
- a foundation layer formed on the first face of the semiconductor substrate;
- a first electrode formed on the foundation layer;
- a second electrode formed on the foundation layer;
- an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face of the semiconductor substrate, and the integrated circuit being electrically connected to the first electrode and the second electrode;
- a groove portion formed through the semiconductor substrate;
- an insulating film formed on a side wall of the groove portion;
- a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;
- a first insulation layer formed on the foundation layer;
- a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;
- a second insulation layer formed on the first interconnection and the first insulation layer;
- a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection;
- a third insulation layer formed on the second interconnection and the second insulation layer;
- a second semiconductor substrate including a second semiconductor substrate first face and a second semiconductor substrate second face on a side opposite to the second semiconductor substrate first face;
- and
- an electronic element formed on the second semiconductor substrate first face, the electronic element being electrically connected to the conductive portion;
- wherein the semiconductor substrate is silicon;
- wherein the second semiconductor substrate is silicon;
- wherein the integrated circuit is configured to apply a voltage to the electronic element via the second electrode and the conductive portion;
- and
- wherein the second interconnection, the first interconnection, the first electrode, the integrated circuit, the second electrode the conductive portion and the electronic element are electrically connected in that order.
18 more elements
A device comprising:
- a semiconductor substrate including a first face and a second face on a side opposite to the first face;
- a foundation layer formed on the first face of the semiconductor substrate;
- a first electrode formed on the foundation layer;
- a second electrode formed on the foundation layer;
- an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face of the semiconductor substrate, and the integrated circuit being electrically connected to the first electrode and the second electrode;
- a groove portion etched through the semiconductor substrate;
- an insulating film formed on a side wall of the groove portion;
- a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;
- a first insulation layer formed on the foundation layer, the first electrode and the second electrode;
- a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;
- a second insulation layer formed on the first interconnection and the first insulation layer;
- a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection;
- and
- a third insulation layer formed on the second interconnection and the second insulation layer;
- wherein the semiconductor substrate is silicon;
- and
- wherein the second interconnection, the first interconnection, the first electrode, the integrated circuit, the second electrode and the conductive portion are electrically connected in that order.
14 more elements
Dependencies are inferred from the claim text.