Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsShaofeng DING, So Ra Park, Jeong Hoon Ahn
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a substrate having a first surface and a second surface facing the first surface, the substrate having a via hole, the via hole extending from the first surface of the substrate toward the second surface of the substrate, a through via in the via hole, a semiconductor component on the first surface of the substrate, and an internal buffer structure spaced apart from the via hole and between the via hole and the semiconductor component, the internal buffer structure extending from the first surface of the substrate toward an inside of the substrate, a top end of the internal buffer structure being at a level higher than a top end of the through via may be provided.
Claims20
A semiconductor device, comprising:
- a substrate having a first surface and a second surface facing the first surface, the substrate having a via hole, the via hole extending from the first surface of the substrate toward the second surface of the substrate;
- a through via in the via hole;
- a semiconductor component on the first surface of the substrate;
- and
- an internal buffer structure spaced apart from the via hole and between the via hole and the semiconductor component, the internal buffer structure extending from the first surface of the substrate toward an inside of the substrate, a top end of the internal buffer structure being at a level higher than a top end of the through via.
A semiconductor device, comprising:
- a substrate;
- a through via extending into the substrate from a first surface of the substrate;
- a semiconductor component on the first surface of the substrate;
- an internal buffer structure surrounding the through via, the internal buffer structure being spaced apart from the through via by a first distance;
- and
- an external buffer structure surrounding the through via, the external buffer structure being spaced apart from the through via by a second distance, the second distance being greater than the first distance, each of the first distance and the second distance being less than a distance between the through via and the semiconductor component.
Dependencies are inferred from the claim text.