Power electronics assemblies with cio bonding layers and double sided cooling, and vehicles incorporating the same

An electronic assembly comprising:

• a lower dielectric layer;
• an upper dielectric layer;
• a lower MIO layer;
• an upper MIO layer;
• and
• a semiconductor device, wherein:
• the lower MIO layer is bonded to the lower dielectric layer;
• the upper MIO layer is bonded to the upper dielectric layer;
• a lower surface of the semiconductor device is bonded to an upper surface of the lower MIO layer;
• and
• an upper surface of the semiconductor device is bonded to a lower surface of the upper MIO layer.

An electronic assembly comprising:

• a first semiconductor assembly comprising a first lower MIO layer, a first upper MIO layer, and a first semiconductor device;
• and
• a second semiconductor assembly comprising a second lower MIO layer, a second upper MIO layer, and a second semiconductor device, wherein:
• a lower surface of the first semiconductor device is bonded to an upper surface of the first lower MIO layer;
• an upper surface of the first semiconductor device is bonded to a lower surface of the first upper MIO layer;
• a lower surface of the second semiconductor device is bonded to an upper surface of the second lower MIO layer;
• and
• an upper surface of the second semiconductor device is bonded to a lower surface of the second upper MIO layer.