Semiconductor packages
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Cheng Lin, Szu-Wei Lu
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Abstract
Semiconductor packages are provided. One of the semiconductor package includes a semiconductor die, a thermal conductive pattern, an encapsulant and a thermal conductive layer. The thermal conductive pattern is disposed aside the semiconductor die. The encapsulant encapsulates the semiconductor die and the thermal conductive pattern. The thermal conductive layer covers a rear surface of the semiconductor die, wherein the thermal conductive pattern is thermally coupled to the semiconductor die through the thermal conductive layer and electrically insulated from the semiconductor die.
Claims20
A semiconductor package, comprising:
- a semiconductor die;
- a thermal conductive pattern aside the semiconductor die;
- an encapsulant, encapsulating the semiconductor die and the thermal conductive pattern;
- and
- a thermal conductive layer covering a rear surface of the semiconductor die, wherein the thermal conductive pattern is thermally coupled to the semiconductor die through the thermal conductive layer and electrically insulated from the semiconductor die.
A semiconductor package, comprising:
- a semiconductor die;
- an encapsulant laterally encapsulating the semiconductor die;
- a first through via embedded in the encapsulant and electrically connected to the semiconductor die;
- a second through via embedded in the encapsulant and electrically insulated from the semiconductor die;
- and
- a thermal conductive layer covering the semiconductor die, wherein the second through via is thermally coupled to the semiconductor die through the thermal conductive layer.
A semiconductor package, comprising:
- a semiconductor die;
- an encapsulant laterally encapsulating the semiconductor die;
- a first through via embedded in the encapsulant and electrically connected to the semiconductor die;
- a second through via embedded in the encapsulant and electrically insulated from the semiconductor die;
- and
- a thermal conductive layer covering the semiconductor die and the encapsulant, wherein the thermal conductive layer comprises a first portion covering the semiconductor die and a second portion covering the second through via, and the first portion of the thermal conductive layer is thicker than a second portion of the thermal conductive layer.
Dependencies are inferred from the claim text.