Multi-Layer Passivation Structure and Method

A semiconductor device, comprising:

• a lower contact feature disposed over a substrate;
• a dielectric layer disposed over the lower contact feature;
• an upper contact feature disposed over and through the dielectric layer, the upper contact feature being electrically connected to the lower contact feature;
• and
• a passivation structure disposed over the second contact feature and over the dielectric layer, wherein the passivation structure comprises a first nitride layer, a second nitride layer, and an oxide layer disposed between the first and second nitride layers.

A method, comprising:

• forming a top metal (TM) contact over a semiconductor substrate;
• depositing a first dielectric layer over the TM contact;
• forming a metal-insulator-metal (MIM) structure over the first dielectric layer;
• depositing a second dielectric layer over the MIM structure;
• forming a metal via that is electrically coupled to the MIM structure and to the TM contact;
• forming a passivation structure over the metal contact and the second dielectric layer, wherein forming the passivation structure comprises:
• depositing a first silicon nitride (SiN) layer over the metal via and the second dielectric layer;
• depositing an oxide layer over the first SiN layer;
• and
• depositing a second SiN layer over the oxide layer;
• and
• forming a bonding pad that is electrically coupled to the metal via.