Underfill Control Structures and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Ju Chen, An-Jhih Su, Hsien-Wei Chen, Der-Chyang Yeh, Chi-Hsi Wu, Chen-Hua Yu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Ju Chen, An-Jhih Su, Hsien-Wei Chen, Der-Chyang Yeh, Chi-Hsi Wu, Chen-Hua Yu
Estimating the term…
A semiconductor device and method of reducing the risk of underbump metallization poisoning from the application of underfill material is provided. In an embodiment a spacer is located between a first underbump metallization and a second underbump metallization. When an underfill material is dispensed between the first underbump metallization and the second underbump metallization, the spacer prevents the underfill material from creeping towards the second underbump metallization. In another embodiment a passivation layer is used to inhibit the flow of underfill material as the underfill material is being dispensed.
A semiconductor device comprising:
A package comprising:
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