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US 2020/0006178 A1Published application
Method of Manufacture of a Semiconductor Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Yu Huang, Chih-Wei Wu, Li-Chung Kuo, Long Hua Lee, Sung-Hui Huang, Ying-Ching Shih, Pai Yuan Li
Life of this patent
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Abstract
In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
Claims20
A device comprising:
- a semiconductor device with an opening located at a corner of the semiconductor device;
- a buffer material located at least partially within the opening, wherein the buffer material does not extend across the semiconductor device;
- a substrate bonded to the semiconductor device;
- and
- an underfill material located between the semiconductor device and the substrate, wherein the buffer material has a first property with a value located between a value of the semiconductor device and a value of the underfill material.
2 more elements
A device comprising:
- a first semiconductor device comprising a top surface and a sidewall, wherein the top surface and the sidewall are connected by a first surface that is misaligned from the top surface and the sidewall;
- a buffer material in physical contact with the top surface and covering the first surface, wherein a second surface of the buffer material is aligned with the sidewall;
- and
- an underfill material in physical contact with the top surface and the buffer material.
1 more element
A device comprising:
- a first semiconductor device, the first semiconductor device comprising a first external connection;
- a buffer material located along an outside edge of the first semiconductor device;
- and
- an underfill material extending from a sidewall of the first semiconductor device, around the buffer material, and to a point between the buffer material and the first external connection.
1 more element
Dependencies are inferred from the claim text.