Methods of Forming Contact Features in Field-Effect Transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Hsiung Lin, Yi-Hsun Chiu, Shang-Wen Chang
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Abstract
A method includes forming an interlayer dielectric (ILD) layer over a first epitaxial source/drain (S/D) feature and a second epitaxial S/D feature, where the first epitaxial S/D feature is disposed adjacent to the second epitaxial S/D feature, forming a dummy contact feature in the ILD layer over the first epitaxial S/D feature, removing a portion of the dummy contact feature and a portion of the ILD layer disposed above the second epitaxial S/D feature to form a first trench, removing a remaining portion of the dummy contact feature to form a second trench, and forming a metal S/D contact in the first and the second trenches.
Claims20
A method comprising:
- forming an interlayer dielectric (ILD) layer over a first epitaxial source/drain (S/D) feature and a second epitaxial S/D feature, wherein the first epitaxial S/D feature is disposed adjacent to the second epitaxial S/D feature;
- forming a dummy contact feature in the ILD layer over the first epitaxial S/D feature;
- removing a portion of the dummy contact feature and a portion of the ILD layer disposed above the second epitaxial S/D feature to form a first trench;
- removing a remaining portion of the dummy contact feature to form a second trench;
- and
- forming a metal S/D contact in the first and the second trenches.
A method, comprising:
- etching an interlayer dielectric (ILD) layer to form a first trench exposing a first source/drain (S/D) feature over a first fin, wherein the first S/D feature is disposed adjacent a second S/D feature over a second fin;
- depositing a dielectric material in the first trench to form a dielectric feature;
- and
- replacing the dielectric feature with a conductive feature, wherein the conductive feature directly contacts the first S/D feature and extends over the second S/D feature, and wherein the replacing includes:
- removing a portion of the dielectric feature and a portion of the ILD layer disposed over the second S/D feature to form a second trench, wherein a width of the second trench spans a width of the dielectric feature and over a portion of the second S/D feature;
- removing a remaining portion of the dielectric feature to form a third trench that exposes the first S/D feature;
- and
- forming the conductive feature in the second and the third trench.
A semiconductor structure, comprising:
- a first epitaxial source/drain (S/D) feature;
- a second epitaxial S/D feature disposed adjacent to the first epitaxial S/D feature along a first direction;
- a third epitaxial S/D features disposed adjacent to the second epitaxial S/D feature along a second direction different from the first direction;
- an interlayer dielectric (ILD) layer disposed over the first, the second, and the third epitaxial S/D features;
- a first S/D contact disposed over and contacting the first epitaxial S/D feature, wherein a portion of the first S/D contact laterally extends over the second epitaxial S/D feature and is separated from the second epitaxial S/D feature by the ILD layer;
- a second S/D contact disposed over and contacting the third epitaxial S/D feature;
- and
- a metal layer disposed over the second S/D contact, wherein the metal layer is configured to couple the first S/D contact with the second S/D contact.
Dependencies are inferred from the claim text.