Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsZhi-Cheng Lee, Kai-Lin Lee, Wei-Jen Chen
Life of this patent
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a first gate structure and a second gate structure on the first fin-shaped structure; using a patterned mask to remove the first gate structure and part of the first fin-shaped structure to form a first trench; and forming a first dielectric layer in the first trench to form a first single diffusion break (SDB) structure and around the second gate structure.
Claims18
A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region;
- forming a first fin-shaped structure on the first region;
- forming a first gate structure and a second gate structure on the first fin-shaped structure;
- using a patterned mask to remove the first gate structure and part of the first fin-shaped structure to form a first trench;
- and
- forming a first dielectric layer in the first trench to form a first single diffusion break (SDB) structure and around the second gate structure.
A semiconductor device, comprising:
- a substrate having a first region and a second region;
- a first fin-shaped structure on the first region and a second fin-shaped structure on the second region;
- a first single diffusion break (SDB) structure on the first region;
- and
- a second SDB structure on the second region, wherein a top surface of the first SDB structure is higher than a top surface of the first fin-shaped structure while a top surface of the second SDB structure is even with a top surface of the second fin-shaped structure.
Dependencies are inferred from the claim text.