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US 2020/0006151 A1Published application
Forming Nitrogen-Containing Low-K Gate Spacer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Chung-Chi Ko
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Abstract
A method includes forming a dummy gate stack over a semiconductor region of a wafer, and depositing a gate spacer layer using Atomic Layer Deposition (ALD) on a sidewall of the dummy gate stack. The depositing the gate spacer layer includes performing an ALD cycle to form a dielectric atomic layer. The ALD cycle includes introducing silylated methyl to the wafer, purging the silylated methyl, introducing ammonia to the wafer, and purging the ammonia.
Claims21
A method comprising:
- forming a dummy gate stack over a semiconductor region of a wafer;
- and
- depositing a gate spacer layer using Atomic Layer Deposition (ALD) on a sidewall of the dummy gate stack, wherein the depositing the gate spacer layer comprises performing an ALD cycle to form a dielectric atomic layer, wherein the ALD cycle comprises:
- introducing silylated methyl to the wafer;
- purging the silylated methyl;
- introducing ammonia to the wafer;
- and
- purging the ammonia.
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A method comprising:
- forming a dummy gate stack over a semiconductor region of a wafer;
- forming a dielectric layer comprising silicon, nitrogen, oxygen, carbon, and hydrogen, wherein the dielectric layer has a first k value;
- and
- performing an anneal on the dielectric layer, wherein after the anneal, the dielectric layer has a second k value lower than the first k value.
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-20. (canceled)
A method comprising:
- depositing a dielectric layer on a wafer, wherein the depositing comprises conducting ammonia, silylated methyl, and ammonia sequentially to the wafer;
- performing an anneal process on the wafer after the dielectric layer is formed, wherein the anneal process is performed using an oxygen-containing gas;
- and
- patterning the dielectric layer by removing a portion of the dielectric layer.
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Dependencies are inferred from the claim text.