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AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Pouya Hashemi, Choonghyun Lee
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Embodiments of the invention are directed to fin-based field effect transistor (FET) devices formed on a substrate. In a non-limiting example, the devices a first fin formed in a p-type FET (PFET) region of the substrate, wherein the first fin includes a top region, a central region, and a bottom region. The central region of the first fin includes an epitaxial first material in-situ doped with a first type of semiconductor material at a first concentration level. The top region of the first fin includes the epitaxial first material in-situ doped with the first type of semiconductor material at the first concentration level, along with an anneal-induced second concentration level of the first type of semiconductor material. A final concentration level of the first type of semiconductor material in the top region includes the first concentration level and the second concentration level.
Fin-based field effect transistor (FET) devices formed on a substrate, the devices comprising:
The devices of 12 further comprising a second faceted interface between the buffer region of the second fin and the bottom region of the second fin.
A set of fin-based field effect transistor (FET) devices formed on a substrate, the devices comprising:
Dependencies are inferred from the claim text.