Method for producing a through semiconductor via connection

A method of producing a through semiconductor via (TSV) connection in a stack comprising a first semiconductor die and a second semiconductor die or a carrier substrate, the first die being bonded to the second die or to the carrier substrate, the first die comprising:

• a semiconductor substrate portion having a front side and a back side;
• on the front side of the substrate portion, at least one well of semiconductor material of a first doping type implanted in an area of the substrate portion, the area being formed of semiconductor material of a second doping type opposite the first doping type;
• one or more fins of material of the first doping type extending outward from the at least one well;
• a conductor that is electrically coupled to at least one of the one or more fins extending outward from the at least one well,
• the method comprising:
• producing an opening for the TSV connection, wherein the opening is produced by an etching process that stops in the at least one well of semiconductor material of the first type;
• and
• filling the opening with an electrically conductive material, wherein after filling of the opening, an electrical connection is established from the TSV connection to the conductor, through the at least one well and through the at least one of the one or more fins.