Method of Fabricating Redistribution Circuit Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
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Abstract
A method of fabricating a redistribution circuit structure including the following steps is provided. A conductive via is formed. A photosensitive dielectric layer is formed to cover the conductive via. The photosensitive dielectric layer is partially removed to reveal the conductive via at least through an exposure and development process. A redistribution wiring is formed on the photosensitive dielectric layer and the revealed conductive via.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming a conductive via;
- forming a photosensitive dielectric layer to cover the conductive via;
- thinning the photosensitive dielectric layer to reveal the conductive via, thinning the photosensitive dielectric layer being performed at least through an exposure and development process;
- and
- after thinning the photosensitive dielectric layer, forming a redistribution wiring on the photosensitive dielectric layer and the conductive via.
A method of fabricating a semiconductor device, the method comprising:
- forming a conductive via;
- covering the conductive via with a photosensitive dielectric layer;
- exposing and developing an upper portion of the photosensitive dielectric layer to form a first thinned photosensitive dielectric layer;
- performing a thinning process on the first thinned photosensitive dielectric layer to form a second thinned photosensitive dielectric layer, wherein the conductive via is revealed after performing the thinning process;
- and
- forming a first redistribution wiring on the second thinned photosensitive dielectric layer and the revealed conductive via.
A method of fabricating a semiconductor device, the method comprising:
- forming a conductive via;
- forming a photosensitive dielectric layer over the conductive via;
- performing a first thinning process to thin the photosensitive dielectric layer to form a first thinned photosensitive dielectric layer, wherein the first thinning process comprises at least one exposure and development process;
- after performing the first thinning process, performing a second thinning process to thin the first thinned photosensitive dielectric layer to form a second thinned photosensitive dielectric layer;
- and
- after performing the second thinning process, forming a first redistribution wiring on the second thinned photosensitive dielectric layer and the conductive via.
Dependencies are inferred from the claim text.