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US 2020/0006124 A1Published application
Pattern forming method and imprint apparatus
AssigneeToshiba Memory Corporation
InventorsAnupam MITRA, Tetsuro NAKASUGI, Kazuhiro TAKAHATA
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Abstract
A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.
Claims20
A pattern forming method, comprising:
- dispensing an uncured first resist material on to a substrate in a first resist pattern;
- curing the uncured first resist material with a first light to form a cured first resist pattern on the substrate;
- exposing the cured first resist pattern to a second light;
- dispensing an uncured second resist material on to the cured first resist pattern;
- and
- contacting the uncured second resist material with a patterned imprint template and curing the uncured second resist material.
3 more elements
A lithographic pattern forming method, comprising:
- dispensing a pattern of an uncured first resist material on to a substrate;
- curing the uncured first resist material with a first light to form a cured first resist pattern on the substrate;
- dispensing an uncured second resist material on to the cured first resist pattern;
- exposing the dispensed uncured second resist material to a second light having a different wavelength from the first light;
- and
- contacting the uncured second resist material with a patterned imprint template and curing the uncured second resist material.
3 more elements
Dependencies are inferred from the claim text.