Method of manufacturing semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsRu-Gun LIU, Chin-Hsiang LIN, Chih-Ming LAI, Wei-Liang LIN, Yung-Sung YEN
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Abstract
In accordance with an aspect of the present disclosure, in a pattern forming method for a semiconductor device, a first opening is formed in an underlying layer disposed over a substrate. The first opening is expanded in a first axis by directional etching to form a first groove in the underlying layer. A resist pattern is formed over the underlying layer. The resist pattern includes a second opening only partially overlapping the first groove. The underlying layer is patterned by using the resist pattern as an etching mask to form a second groove.
Claims20
A pattern forming method for a semiconductor device, the method comprising:
- forming a first opening in an underlying layer disposed over a substrate;
- expanding the first opening in a first axis by directional etching to form a first groove in the underlying layer;
- forming a resist pattern over the underlying layer, the resist pattern including a second opening only partially overlapping the first groove;
- and
- patterning the underlying layer by using the resist pattern as an etching mask to form a second groove.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first underlying layer over a substrate and a second underlying layer over the first underlying layer;
- forming a first opening and a second opening in the first and second underlying layers;
- expanding the first opening and the second opening in a first axis by directional etching to form a first groove and a second groove in the second underlying layer;
- forming a resist pattern including a third opening only partially overlapping the first groove and a fourth opening only partially overlapping the second groove;
- patterning the second underlying layer by using the resist pattern as an etching mask to form a first trench and a second trench in the second underlying layer;
- and
- filling the first and second openings formed in the first underlying layer and the first and second trenches formed in the second underlying layer with conductive material.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first underlying layer over a substrate and a second underlying layer over the first underlying layer;
- forming a first resist pattern having a first opening and a second opening over the second underlying layers;
- patterning the first and second underlying layers by using the first resist pattern as an etching mask, thereby forming a third opening and a fourth opening in the first and second underlying layers;
- expanding the third opening and the fourth opening in a first axis by directional etching to form a first groove and a second groove in the second underlying layer;
- forming a second resist pattern including a fifth opening only partially overlapping the first groove and a sixth opening only partially overlapping the second groove;
- and
- patterning the second underlying layer by using the second resist pattern as an etching mask to form a first trench and a second trench in the second underlying layer,
- wherein the first opening and the second opening are spaced apart from each other by an amount of S1, and the first trench and the second trench are spaced apart from each other by an amount of S2, where S1>S2.
Dependencies are inferred from the claim text.