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US 2020/0006117 A1Published application
Method for fabricating semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate
AssigneeUnited Microelectronics Corp.
InventorsPurakh Raj Verma, Chia-Huei Lin, Kuo-Yuh Yang
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Abstract
A method for fabricating semiconductor device comprising the steps of: forming a first trench and a second trench in a substrate; forming a liner in the first trench and the second trench; forming a first patterned mask on the substrate to cover the second trench; removing the liner in the first trench; removing the first patterned mask; and forming an insulating layer in the first trench and the second trench to form a trap rich isolation structure in the first trench and a deep trench isolation structure in the second trench.
Claims12
A method for fabricating semiconductor device, comprising:
- forming a first trench and a second trench in a substrate;
- forming a liner in the first trench and the second trench;
- forming a first patterned mask on the substrate to cover the second trench;
- removing the liner in the first trench;
- removing the first patterned mask;
- and
- forming an insulating layer in the first trench and the second trench to form a trap rich isolation structure in the first trench and a deep trench isolation structure in the second trench.
4 more elements
Dependencies are inferred from the claim text.