Contact structures to deep trench isolation structures and method of nanufacturing the same

A method comprises:

• forming a deep trench structure lined with insulator material;
• forming conductive material filling the deep trench structure;
• forming a local oxide extending above the deep trench structure on exposed portions of the insulator material;
• forming an interlevel dielectric material on the local oxide and the conductive material filling the deep trench structure;
• and
• forming a contact in the interlevel dielectric material, extending to the conductive material and on a side of the local oxide
• wherein the forming of the local oxide material comprises:
• forming at least one pad layer over the deep trench structure;
• forming an opening in the at least one pad layer to expose the insulator material which is lining the deep trench structure;
• and
• performing a local oxidation process on the exposed insulator material.

A method comprising:

• forming a deep trench structure in a semiconductor material;
• lining sidewalls of the semiconductor material with oxide material;
• filling in remaining portions of the deep trench isolation structure with doped poly material;
• exposing the oxide material on the sidewalls of the deep trench structure;
• and
• performing a local oxidation process on the oxide material to form a local oxide on the oxide material, while blocking portions of the doped poly material.