Cross-Wafer RDLs in Constructed Wafers

A method of forming a semiconductor device, the method comprising:

• encapsulating a plurality of device dies in an encapsulant;
• and
• forming redistribution lines over and electrically coupling to the plurality of device dies, wherein the plurality of device dies, the encapsulant, and the redistribution lines are parts of a reconstructed wafer, and the reconstructed wafer comprises:
• a first side edge;
• a second side edge, wherein the first side edge and the second side edge are opposite side edges of the reconstructed wafer;
• a first device die close to the first side edge;
• and
• a second device die close to the second side edge, wherein a cross-wafer redistribution line is formed to comprise at least one of the redistribution lines, and the cross-wafer redistribution line has a first end connecting to the first device die, and a second end connecting to or overlapping the second device die.

A method of forming a semiconductor device comprising:

• forming a reconstructed wafer comprising:
• molding a plurality of device dies in a molding compound;
• forming a plurality of redistribution layers electrically coupling to the plurality of device dies, wherein the plurality of redistribution layers form a plurality of cross-wafer redistribution lines, each connecting a pair of the plurality of device dies, wherein each of the cross-wafer redistribution lines comprises redistribution lines in at least one of the plurality of redistribution layers;
• and
• bonding the reconstructed wafer to a thermal module.