Method of manufacturing semiconductor devices using directional process

A method of manufacturing a semiconductor device, comprising:

• obtaining layout data of an underlying structure formed over a substrate;
• forming a film over the underlying structure;
• and
• performing a local etching by using directional etching, while scanning the substrate, so that an entire surface of the film is subjected to the directional etching,
• wherein a plasma beam intensity of the directional etching is adjusted based on layout data.

A method of manufacturing a semiconductor device, comprising:

• measuring, by a non-contacting sensor, surface topography of an area of a film formed over a substrate;
• and
• performing a local etching on the area by using directional etching, a plasma beam intensity of the directional etching being adjusted according to the measured surface topography,
• wherein the measuring the surface topography and the performing the local etching are performed by moving the substrate relative to the non-contacting sensor and the plasma beam.