Thin Film Inductor, Power Conversion Circuit, and Chip

A power conversion circuit, comprising:

• a thin film inductor, comprising:
• a thin film magnetic core being of a cylindrical structure having openings at two ends, wherein the thin film magnetic core comprises a plurality of layers of magnetic thin films, wherein each layer of magnetic thin film is of the cylindrical structure having openings at two ends, wherein the plurality of layers of magnetic thin films are nested layer upon layer, wherein an insulation layer is positioned between each two adjacent layers of the plurality of layers of magnetic thin films, and wherein the plurality of layers of magnetic thin films comprise:
• a first magnetic thin film;
• and
• a second magnetic thin film adjacent to the first magnetic thin film with the insulation layer disposed between the first magnetic thin film and the second magnetic thin film, wherein the first magnetic thin film is nested in the second magnetic thin film, wherein a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, wherein a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, wherein a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film;
• and
• an electric conductor located in an inner cavity of an innermost layer of magnetic thin film of the plurality of layers of magnetic thin films;
• a capacitor comprising a first end and a second end, wherein an end of the thin film inductor is connected to the first end of the capacitor;
• a first switching transistor comprising an end;
• and
• a second switching transistor comprising a first end and a second end, wherein the end of the first switching transistor is connected to the first end of the second switching transistor, wherein the second end of the second switching transistor is connected to the second end of the capacitor, and wherein another end of the thin film inductor is connected between the end of the first switching transistor and the end of the second switching transistor.

A chip, comprising:

• a power conversion circuit, comprising;
• a thin film inductor, comprising:
• a first end;
• a second end;
• a thin film magnetic core being of a cylindrical structure having openings at two ends, wherein the thin film magnetic core comprises a plurality of layers of magnetic thin films, wherein each layer of magnetic thin film is of the cylindrical structure having openings at two ends, wherein the plurality of layers of magnetic thin films are nested layer upon layer, wherein an insulation layer is positioned between each two adjacent layers the plurality of layers of magnetic thin films, and wherein the plurality of layers of magnetic thin films comprise
• a first magnetic thin film;
• and
• a second magnetic thin film adjacent to the first magnetic thin film with the insulation layer disposed between the first magnetic thin film and the second magnetic thin film, wherein the first magnetic thin film is nested in the second magnetic thin film, wherein a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, wherein a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, wherein a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film;
• and
• an electric conductor located in an inner cavity of an innermost layer of magnetic thin film of the plurality of layers of magnetic thin films;
• a capacitor comprising a first end and a second end, wherein a first end of the capacitor is connected to a first end of the thin film inductor;
• a first switching transistor comprising an end;
• a second switching transistor comprising a first end and a second end, wherein the end of the first switching transistor is connected to the first end of the second switching transistor, wherein the second end of the second switching transistor is connected to the second end of the capacitor, wherein the second end of the thin film inductor is connected between the end of the first switching transistor and the first end of the second switching transistor;
• wherein a current that is from an external power supply and that flows through the thin film inductor increases;
• wherein a voltage between the first and the second end of the capacitor is reversely loaded on the thin film inductor and a current flowing through the thin film inductor decreases when the first switching transistor is switched off and the second switching transistor is switched on.