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US 2020/0005884 A1Published application
Erase page check
AssigneeMicron Technology, Inc.
InventorsTing Luo, Scott Anthony Stoller, Preston Allen Thomson, Devin Batutis, Harish Reddy Singidi, Kulachet Tanpairoj
Life of this patent
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Abstract
Disclosed in some examples are methods, systems, memory devices, and machine readable mediums for performing an erase page check. For example, in response to an unexpected (e.g., an asynchronous) shutdown, the memory device may have one or more cells that did not finish programming. The memory device may detect these cells and erase them or mark them for erasure.
Claims1
A method performed by a NAND memory device, the method comprising:
- identifying a NAND memory cell of the memory device to test for an incomplete programming, the memory cell configured as a multi-level cell;
- shifting a read voltage used to read a first portion of the memory cell a predetermined magnitude toward zero, the read voltage for the first portion having a lowest read voltage of a plurality of read voltages used to read other portions of the memory cell;
- reading a value in the first portion of the memory cell using the shifted read voltage;
- determining that the memory cell was incompletely programmed based upon the value;
- in response to determining that the memory cell was incompletely programmed, mark the memory cell as incompletely programmed;
- and
- wherein shifting the read voltage and reading the value is a user-mode read operation.
4 more elements
Dependencies are inferred from the claim text.