Memory device with dynamic program-verify voltage calibration

A memory device, comprising:

• a memory array including a plurality of memory cells arranged in memory pages;
• and
• a controller coupled to the memory array, the controller configured to:
• determine a target profile including edge targets and middle targets, wherein each of the targets represent a program-verify target corresponding to a logic value for the memory cells,
• determine a feedback measure based on errors corresponding to a read-level voltage, and
• dynamically adjust the target profile based on adjusting one or more of the middle targets according to the feedback measure.

A method of operating a memory device including a controller and a memory array, the method comprising:

• determining a target profile including distribution targets, wherein each of the distribution targets represent a program-verify target corresponding to a logic value for memory cells within the memory array;
• determining a feedback measure based on implementing a processing level for processing data;
• and
• using the controller, dynamically adjusting the target profile by changing the program-verify target according to the feedback measure for balancing an error measure across multiple page types for the memory cells.