Pattern formation method and material for manufacturing semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Wei WANG, Ching-Yu CHANG, Shang-Wern CHANG, Yen-Hao CHEN
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Abstract
In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.
Claims20
A pattern formation method comprising:
- forming a bottom layer over an underlying layer;
- forming a middle layer over the bottom layer;
- forming a resist pattern over the middle layer;
- patterning the middle layer by using the resist pattern as an etching mask;
- patterning the bottom layer by using the patterned middle layer;
- and
- patterning the underlying layer,
- wherein the middle layer contains silicon in an amount of 50 wt % or more and an organic material.
A pattern formation method comprising:
- forming a Si-containing layer over an underlying layer;
- forming a resist pattern over the Si-containing layer;
- patterning the Si-containing layer by using the resist pattern as an etching mask;
- and
- patterning the underlying layer by using the patterned Si-containing layer;
- wherein the Si-containing layer contains silicon in an amount of 50 wt % or more or 70 wt % or less, and is none of an amorphous silicon layer, a polysilicon layer, a silicon oxide based layer or a silicon nitride based layer.
A silicon containing solution for manufacturing a semiconductor device, the silicon containing solution comprising:
- silicon particles or silicon clusters;
- and
- a solvent, wherein:
- the silicon particles or the silicon clusters include silicon in an amount of 50 wt % or more or 80 wt % or less, and
- each of the silicon particles or the silicon clusters includes a silicon core surrounded by a plurality of organic ligands.
Dependencies are inferred from the claim text.