Mask and method for fabricating the same

A mask, comprising:

• a target pattern having consecutive edges;
• and
• a scattering bar having disposed adjacent to consecutive edges of the target pattern, wherein the scattering bar comprises:
• a first segment;
• and
• a second segment having a first end connecting to the first segment, wherein a first angle between the first segment and the second segment is less than 180 degree.

A method for fabricating a semiconductor device, the method comprising:

• forming a photo resist layer over a substrate;
• exposing the photo resist layer with actinic radiation through a mask by using an optical lithography tool;
• and
• developing the exposed photo resist layer to form a resist pattern, wherein the mask includes:
• a target pattern having consecutive edges;
• and
• a scattering bar having disposed adjacent to consecutive edges of the target pattern, wherein the scattering bar comprises:
• a first segment;
• and
• a second segment having a first end connecting to the first segment, wherein a first angle between the first segment and the second segment is less than 180 degree.