Mask for euv lithography and method of manufacturing the same

A method of manufacturing an extreme ultraviolet (EUV) lithography mask, the method comprising:

• forming an image pattern in an absorption layer of EUV mask blank,
• the EUV mask blank including:
• a multilayer stack comprising alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate;
• a capping layer disposed over the multilayer stack;
• and
• an absorption layer disposed over the capping layer;
• forming a border region surrounding the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched;
• and
• forming an inter-diffused portion over the multilayer stack of the trench.

A mask for extreme ultraviolet (EUV) lithography, the mask comprising:

• a multilayer stack comprising alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate;
• a capping layer disposed over the multilayer stack;
• an absorption layer having an image pattern formed therein disposed over the capping layer;
• a border region surrounding the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched,
• wherein the border region has concave sidewalls.