Photolithography Method and Photolithography System

A photolithography method, comprising:

• providing a first semiconductor substrate having a first target layer disposed thereon and a second semiconductor substrate having a second target layer disposed thereon;
• coating the first target layer with a solution using a nozzle disposed at a first distance away from the first target layer, thereby forming a first image of the solution on the first target layer;
• comparing the first image with a reference image of the solution to obtain a comparison dataset;
• subsequent to coating the first target layer with the solution, patterning the first target layer;
• determining a second distance for the nozzle to be positioned away from the second target layer based on the comparison dataset, wherein the second distance is different from the first distance;
• coating the second target layer with the solution using the nozzle disposed at the second distance away from the second target layer;
• and
• subsequent to coating the second target layer, patterning the second target layer.

A photolithography method, comprising:

• forming a first resist layer over a first target layer, including:
• depositing a first layer on the first target layer from a dispenser at a first distance away from the first target layer, wherein depositing the first layer forms a first image over the first target layer;
• processing the first image to generate a first comparison result;
• comparing viscosity of the first layer with viscosity of a second layer;
• after depositing the first layer, positioning the dispenser at a second distance away from the first target layer according to a difference between the viscosity of the first layer and the viscosity of the second layer;
• depositing the second layer on the first layer from the dispenser at the second distance away from the first target layer to form the first resist layer, wherein depositing the second layer forms a second image over the first target layer;
• and
• processing the second image to generate a second comparison result;
• patterning the first resist layer;
• patterning the first target layer using the patterned first resist layer as a first mask;
• forming a second resist layer over a second target layer, including:
• positioning the dispenser at a third distance away from the second target layer, wherein the third distance is determined based on the first distance and the first comparison result;
• depositing a third layer on the second target layer from the dispenser at the third distance away from the second target layer;
• positioning the dispenser at a fourth distance away from the second target layer, wherein the fourth distance is determined based on the second distance and the second comparison result;
• and
• depositing a fourth layer on the third layer from the dispenser at the fourth distance away from the second target layer to form the second resist layer;
• patterning the second resist layer;
• and
• patterning the second target layer using the patterned second resist layer as a second mask.