Semiconductor synthesizing device and method

A synthesizing device for gallium arsenide polycrystals, comprising a semiconductor synthesizing device applied in the Horizontal Bridgman method, including a closed reaction tube, a first furnace body, and a second furnace body,

• wherein the first furnace body and the second furnace body are connected via an intermediate pipe, the reaction tube is placed in a furnace chamber jointly defined by the first furnace body, the intermediate pipe and the second furnace body, and a temperature control device is provided corresponding to the first furnace body and the second furnace body separately and respectively,
• wherein the reaction tube is arranged with a plurality of horizontal boat containers which include a plurality of first-layer horizontal boat containers disposed at different positions in the reaction tube in a horizontal direction, and a second-layer horizontal boat container superposed on a bracket device provided on at least one of the first-layer horizontal boat containers, wherein the bracket device is configured to support the second-layer horizontal boat container and provide a gap between the first-layer horizontal boat containers and the second-layer horizontal boat container, and
• wherein the first furnace body is a low temperature zone furnace body, and the second furnace body is a high temperature zone furnace body, a horizontal boat container containing arsenic and a horizontal boat container containing gallium are respectively placed in the low temperature zone furnace body and the high temperature zone furnace body, and the horizontal boat container containing gallium is superposed, so as to prepare a plurality of gallium arsenide polycrystalline rods at one preparation process.

A synthesizing method for gallium arsenide polycrystals using a synthesizing device for gallium arsenide polycrystals, the synthesizing device comprising a semiconductor synthesizing device applied in the Horizontal Bridgman method, including a closed reaction tube, a first furnace body, and a second furnace body,

• wherein the first furnace body and the second furnace body are connected via an intermediate pipe, the reaction tube is placed in a furnace chamber jointly defined by the first furnace body, the intermediate pipe and the second furnace body, and a temperature control device is provided corresponding to the first furnace body and the second furnace body separately and respectively,
• wherein the reaction tube is arranged with a plurality of horizontal boat containers which include a plurality of first-layer horizontal boat containers disposed at different positions in the reaction tube in a horizontal direction, and a second-layer horizontal boat container superposed on a bracket device provided on at least one of the first-layer horizontal boat containers, wherein the bracket device is configured to support the second-layer horizontal boat container and provide a gap between the first-layer horizontal boat containers and the second-layer horizontal boat container,
• wherein the first furnace body is a low temperature zone furnace body, and the second furnace body is a high temperature zone furnace body, a horizontal boat container containing arsenic and a horizontal boat container containing gallium are respectively placed in the low temperature zone furnace body and the high temperature zone furnace body, and the horizontal boat container containing gallium is superposed, so as to prepare a plurality of gallium arsenide polycrystalline rods at one preparation process, and
• wherein in the horizontal boats being superposed, a loading weight of the horizontal boat container located on an upper side is smaller than a loading weight of the horizontal boat container located on a lower side.