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US 2020/0002840 A1Published application
Systems for producing a monocrystalline ingot that involve monitoring neck growth moving average
OwnerZheng Lu, Chun-Sheng Wu +4inventors
InventorsZheng Lu, Chun-Sheng Wu, Feng-Chien Tsai, Chi-Yung Chen, Yeong-Ming Sheu, Hsien-Ta Tseng
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Abstract
Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for producing an ingot main body suspended from the neck.
Claims7
A system for producing a monocrystalline silicon ingot comprising:
- a crystal puller in which the silicon ingot is pulled;
- a crucible for holding a polycrystalline silicon melt within the crystal puller;
- a seed crystal chuck that secures a seed for contacting the silicon melt;
- and
- a control unit for controlling growth of a neck from which an ingot main body is suspended, the control unit regulating the pull rate of the neck, the control unit being configured to calculate a moving average of the pull rate and compare the moving average to a target moving average, the control unit terminating the neck when the pull rate is outside of the target moving average.
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Dependencies are inferred from the claim text.