Low Oxide Trench Dishing Chemical Mechanical Polishing

A method of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising silicon oxide film, comprising

• (a) providing the semiconductor substrate;
• (b) providing a polishing pad;
• (c) providing a chemical mechanical polishing (CMP) composition comprising
• 0.05 wt. % to 10 wt. % abrasive particles selected from the group consisting of inorganic oxide particles, metal-coated inorganic oxide particles, organic polymer particles, oxide-coated organic polymer particles and combinations thereof;
• 0.01 wt. % to 20.0% wt. % chemical additive;
• solvent selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic solvents;
• and
• optionally
• biocide;
• and
• pH adjuster;
• wherein
• the composition has a pH of 2 to 12;
• the inorganic oxide particles are selected from the group consisting of ceria, colloidal silica, high purity colloidal silica, colloidal ceria, alumina, titania, zirconia particles, and combinations thereof;
• the metal-coated inorganic oxide particles are selected from the group consisting of ceria-coated inorganic oxide particles selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia particles and combinations thereof;
• the organic polymer particles are selected from the group consisting of polystyrene particles, polyurethane particles, polyacrylate particle, and combinations thereof;
• the metal-coated organic polymer particles are selected from the group consisting of ceria-coated organic polymer particles, zirconia-coated organic polymer particles, silica-coated organic polymer particles, and combinations thereof;
• and
• the chemical additive is selected from the group consisting of
• (A) a molecular structure (a):
• wherein R1, R2, R3, R4 and R5 (Rs in group of R1 to R5) are selected from the group consisting of
• (1) (i) at least one R in the group of R1 to R5 is a polyol molecular unit having a structure shown in (b):
• wherein m or n is independently selected from 1 to 5;
• and each of R6, R7, R8 and R9 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• and
• (ii) each of other Rs in the group of R1 to R5 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• and
• (2) (i) at least one R in the group of R1 to R5 is a polyol molecular unit having a structure shown in (b):
• wherein m or n is independently selected from 1 to 5;
• and each of R6, R7, R8 and R9 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• (ii) at least one R in the group of R1 to R5 is a six-member ring polyol as shown in (c):
• wherein
• one of OR in group of OR11, OR12, OR13 and OR14 will be replaced by O in structure (a);
• and
• R10 and each of other R in group of R10, R11, R12, R13 and R14 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• and
• (iii) each of other Rs in the group of R1 to R5 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• (B) a molecular structure selected from the group consisting of at least one (d), at least one (e), at least one (f), at least one (g), at least one (h) and combinations thereof;
• wherein n is selected from 3 to 12;
• R1, R2, R3, R4, R5, R6, R7 R8, R9, R10, R11, R12, R13, and R14 can be the same or different atoms or functional groups;
• and each R is independently selected from the group consisting of hydrogen, oxygen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof;
• wherein, at least four of them are hydrogen atoms;
• (d) contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition;
• and
• (e) polishing the least one surface comprising silicon dioxide film;
• wherein the silicon oxide film is selected from the group consisting of Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD (HDP), spin on silicon oxide film, flowable CVD oxide film, carbon doped oxide film, nitrogen doped oxide film, and combinations thereof.

A system of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising silicon oxide film, comprising

• a. the semiconductor substrate;
• b. a polishing pad;
• and
• c. a chemical mechanical polishing (CMP) composition comprising
• 0.05 wt. % to 10 wt. % abrasive particles selected from the group consisting of inorganic oxide particles, metal-coated inorganic oxide particles, organic polymer particles, oxide-coated organic polymer particles and combinations thereof;
• 0.01 wt. % to 20.0% wt. % chemical additive;
• solvent selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic solvents;
• and
• optionally
• biocide;
• and
• pH adjuster;
• wherein
• the composition has a pH of 2 to 12;
• the inorganic oxide particles are selected from the group consisting of ceria, colloidal silica, high purity colloidal silica, colloidal ceria, alumina, titania, zirconia particles, and combinations thereof;
• the metal-coated inorganic oxide particles are selected from the group consisting of ceria-coated inorganic oxide particles selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia particles and combinations thereof;
• the organic polymer particles are selected from the group consisting of polystyrene particles, polyurethane particles, polyacrylate particle, and combinations thereof;
• the metal-coated organic polymer particles are selected from the group consisting of ceria-coated organic polymer particles, zirconia-coated organic polymer particles, silica-coated organic polymer particles, and combinations thereof;
• and
• the chemical additive has at least four hydroxyl functional groups and is selected from the group consisting of
• (A) a molecular structure (a):
• wherein R1, R2, R3, R4 and R5 (Rs in group of R1 to R5) are selected from the group consisting of
• (1) (i) at least one R in the group of R1 to R5 is a polyol molecular unit having a structure shown in (b):
• wherein m or n is independently selected from 1 to 5;
• and each of R6, R7, R8 and R9 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• and
• (ii) each of other Rs in the group of R1 to R5 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• and
• (2) (i) at least one R in the group of R1 to R5 is a polyol molecular unit having a structure shown in (b):
• wherein m or n is independently selected from 1 to 5;
• and each of R6, R7, R8 and R9 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• (ii) at least one R in the group of R1 to R5 is a six-member ring polyol as shown in (c):
• wherein
• one of OR in group of OR11, OR12, OR13 and OR14 will be replaced by O in structure (a);
• and
• R10 and each of other R in group of R10, R11, R12, R13 and R14 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• and
• (iii) each of other Rs in the group of R1 to R5 is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;
• (B) a molecular structure selected from the group consisting of at least one (d), at least one (e), at least one (f), at least one (g), at least one (h) and combinations thereof;
• wherein n is selected from 3 to 12;
• R1, R2, R3, R4, R5, R6, R7 R8, R9, R10, R11, R12, R13, and R14 can be the same or different atoms or functional groups;
• and each R is independently selected from the group consisting of hydrogen, oxygen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof;
• wherein, at least four of them are hydrogen atoms;
• wherein
• the silicon oxide film is selected from the group consisting of Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD (HDP), spin on silicon oxide film, flowable CVD oxide film, carbon doped oxide film, nitrogen doped oxide film, and combinations thereof;
• and
• the at least one surface comprising silicon oxide film is in contact with the polishing pad and the chemical mechanical polishing composition.