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US 2020/0002178 A1Published application
Core wire for use in silicon deposition, method for producing said core wire, and method for producing polycrystalline silicon
AssigneeTokuyama Corporation
InventorsMasayoshi NISHIKAWA, Yuji INOUE
Life of this patent
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Abstract
Efficiency of producing polycrystalline silicon is improved. A silicon filament (11) is constituted by a rod-shaped member made of polycrystalline silicon. The polycrystalline silicon has an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma. On a side surface, in a lengthwise direction, of the rod-shaped member, crystal grains each having a crystal grain size of not less than 1 mm are observed.
Claims7
A silicon deposition filament,
- the silicon deposition filament being constituted by a rod-shaped member made of polycrystalline silicon,
- the polycrystalline silicon having an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma,
- on a side surface, in a lengthwise direction, of the rod-shaped member, crystal grains each having a crystal grain size of not less than 1 mm being observed.
A method for producing a silicon deposition filament, the method comprising the steps of:
- producing a polycrystalline silicon ingot, which contains crystal grains each having a crystal grain size of not less than 1 mm and which has an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma, by a Czochralski method in which polycrystalline silicon is used as a seed crystal;
- and
- processing the polycrystalline silicon ingot into a rod-shaped member.
Dependencies are inferred from the claim text.