Semiconductor laser

Semiconductor laser comprising

• a semiconductor layer sequence which has an n-conducting n-region, a p-conducting p-region and an intermediate active zone for generating laser radiation,
• a p-contact layer which is transmissive to the laser radiation and which is made of a transparent conductive oxide and which is designed for impressing current directly into the p-region, and
• an electrically conductive and metallic p-contact structure which is located directly on the p-contact layer,
• wherein
• the p-contact layer is part of a cladding layer for guiding the laser radiation so that the laser radiation intentionally enters the p-contact layer during operation of the semiconductor laser,
• the semiconductor layer sequence has two facets which form resonator end faces for the laser radiation,
• in at least one current protection region directly on at least one of the facets a current impression into the p-region is suppressed,
• in the direction perpendicular to the associated facet the current protection region has an extent of at least 0.5 μm and of at most 100 μm and additionally of at most 20% of a resonator length for the laser radiation, and
• in at least one current protection region the p-region has a greater thickness than in remaining regions and the p-contact layer is removed from the current protection region, or in at least one current protection region the p-contact layer is only partially removed, so that in said current protection region an effective refractive index for the laser radiation in the p-contact layer decreases in the direction towards the associated facet.